吳瑞祺、李坤彥*: Adjustment of Abrupt Drops in the C-V Curves of Various 4H-SiC MOSFETs and JBS Diodes, IEEE Electron Device Letters, vol. 46, no. 2, pp. 135–138, February 2025, doi: 10.1109/LED.2024.3522278.
眾所周知，超接面金氧半場效電晶體(Super Junction MOSFET, SJ-MOSFET)的電容曲線，在特定逆向偏壓下有突降現象(The abrupt drop)。然而，本研究發現，傳統平面式MOSFET與接面位障蕭特基二極體(Junction-Barrier Schottky dio ...更多