Research Results of the Application of Charge-transfer Supramolecular Electrets in Bistable Photonic Transistor Memory Published in Journal 《Advanced Functional Materials》
The research team led by Prof. Wen-Chang Chen (陳文章) from Chemical Engineering and Advanced Research Center for Green Materials Science and Technology (ARC-GMST, NTU) recently develops highly efficient photo-induced recovery conferred using charge-transfer supramolecular electrets in bistable photonic transistor memory successfully, making a breakthrough in both switchability and stability. This innovative research result is the first application of charge-transfer supramolecules in electrets of photonic FET memory devices, providing a new perspective on the material design and matching of the devices. With the contribution and the novel concept of future development, this research result is chosen and published as the inside back cover of the journal《Advanced Functional Materials》(2021, 31, 2102174).
Prof. Chen’s research team utilizes the donor-acceptor structure to effectively make the charge-transfer supramolecular to be the electret for charge storage, so that the photon-generated exciton can eliminate the charge written by the electric field, and then through the reaction in the charge transfer complex to retain the charge, achieving the concept of two-way memory write. In addition, through the combination of the optical spectrum between the semiconductor layer and the electret layer, the developed device has multiple light driven ranges, which exhibits superior memory switchability, showing a broad memory window and memory ratio of over 106 after 104 s.
This research is mainly funded by ARC-GMST, NTU (sponsored by Higher Education SPROUT Project, MOE) and MOST.
Application of Charge-transfer Supramolecular Electrets in Bistable Photonic Transistor Memory
Research Result Chosen as the Inside Back Cover of 《Advanced Functional Materials》
Article: Highly Efficient Photo-Induced Recovery Conferred Using Charge-Transfer Supramolecular Electrets in Bistable Photonic Transistor Memory
Y.-F. Yang, Y.-C. Chiang, Y.-C. Lin, G.-S. Li, C.-C. Hung, W.-C. Chen*
First published: Oct. 1st, 2021 in《Advanced Functional Materials》
Adv. Funct. Mater., 2021, 31, 2102174. https://doi.org/10.1002/adfm.202170299