The SiC Semiconductor Team Led by Prof. Kung-Yen Lee Awarded Excellent Entrepreneurship Award of FITI Program, MOST

“SiC Semiconductor” Team Wins the Excellent Entrepreneurship Award of FITI Program. Prof. Kung-Yen Lee (李坤彥), Department of Engineering Science and Ocean Engineering (2nd from the left), Prof. Cha-Lin Liu (劉家伶)(3rd from the left), Chen-Dong Tzou (鄒振東)(1st from the right), Yun-Kai Lai (賴云凱) (2nd from the right), and Kai-Hsun Lin (林楷勳)(1st from the left)

The Award Ceremony of FITI Program (FROM IP TO IPO Program創新創業激勵計畫), executed by Science and Technology Policy Research and Information Center (STPI) under National Applied Research Laboratories (NARLabs) and supervised by the Ministry of Science and Technology (MOST), was held on July 3rd, 2020 at Taiwan Tech Arena (TTA) in Taipei Arena. The “SiC Semiconductor” team led by Prof. Kung-Yen Lee (李坤彥), Department of Engineering Science and Ocean Engineering won the Excellent Entrepreneurship Award after a 6-month competition and evaluation. The team is rewarded with NTD 1 million entrepreneurship funds sponsored by enterprises and another NTD 1 million from MOST. This award represents the top honor and the foundation for young and start-up entrepreneurs entering the capital market.

The "SiC Semiconductor" team has converted their silicon carbide research results into highly profitable and efficient semiconductor products. The SiC power semiconductor components developed by Prof. Lee’s team are the 3rd generation of semiconductor products. The characteristics include wide-bandgap, high electric field intensity, high thermal conductivity, high melting point, and low intrinsic concentration, which is suitable for operation in harsh environments of high temperature, high pressure, and high frequency. The application of the product includes power supplies, high-efficiency computing systems, electric vehicles, high-speed rail, renewable energy, and defense and space industries, etc., which can reduce system weight, decrease power loss, improve efficiency, and conduct energy-saving and carbon-reducing.

In 6 months, the "SiC Semiconductor" team connected the various resources of FITI Program office and Hsinchu Science Park Bureau, MOST to conduct patent layout, fund-raising, business model precision and AAN Funding discussions, strengthening professional capabilities in various fields, planning the business blueprint and layout of SiC power semiconductor components, and successfully taking the first step in technology commercialization.

According to statistics, the CAGR (Compound Annual Growth Rate) of SiC power semiconductor components has reached 26% with over 2 billion USD in the capital market. Therefore, the "SiC Semiconductor" team will continue to refine the research and development technology and actively introduce the technology to Taiwan's semiconductor industry, providing the best solutions for industries, increasing the independence in key components, and creating an all-win situation where industry, government, and university all benefit from the research result.